| PART |
Description |
Maker |
| MX29LV128DB |
128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
| AD5330 AD5330BRU AD5331 AD5331BRU AD5333 AD5335 AD |
2.5V to 5.5V, 115A Single Rail-to-Rail Voltage Output 12-Bit DAC with Byte-Load Parallel Interface in 20-lead TSSOP
2.5V to 5.5V, 115A Single Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 20-lead TSSOP
2.5V to 5.5V, 115A Single Rail-to-Rail Voltage Output 8-Bit DAC with Parallel Interface in 20-lead TSSOP
From old datasheet system
D/A CONVERTER,SINGLE,8-BIT,CMOS,SSOP,20PIN
2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
|
Analog Devices Inc
AD[Analog Devices]
|
| HM5212325F HM5212325F-B60 HM5212325FBP-B60 |
128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
INFRARED LIGHT EMITTING DIODE
LED ORANGE J-TYPE SMD TAPE/REEL 128M的LVTTL接口SDRAM00兆赫1 - Mword × 32位4个银行PC/100 SDRAM
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|
| K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M- |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M38023E7 M38022E3 M38021E2 M38025M2 M38025M1 M3802 |
RAM size: 256bytes; single-chip 8-bit CMOS microcomputer
RAM size: 192bytes; single-chip 8-bit CMOS microcomputer
1-Ch. 10-Bit 1.25 MSPS ADC 8-Ch., DSP/SPI, Hardware Configurable, Low Power 24-SOIC -40 to 85
TRANS PREBIASED NPN 200MW SOT-23
Screwless Socket Brdg.(50 pk)
8-BIT SINGLE-CHIP MICROCOMPUTER
R1 单芯位CMOS微机
Single Output LDO, 500mA, Fixed(2.5V), Tight Output Accuracy of 2%, Thermal Overload Protection 20-TSSOP 0 to 125 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
Single Chip 8-Bit CMOS Microcomputer
Single Chip 8-bit Microcomputer
RAM size: 384bytes; single-chip 8-bit CMOS microcomputer
RAM size: 512bytes; single-chip 8-bit CMOS microcomputer
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer
RAM size: 1024bytes; single-chip 8-bit CMOS microcomputer
RAM size: 768bytes; single-chip 8-bit CMOS microcomputer
|
Mitsubishi Electric Sem...
http://
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MBM29QM12DH60PCN MBM29QM12DH MBM29QM12DH60 MBM29QM |
128M (8M X 16) BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MBM29QM12DH-60 MBM29QM12DH60 MBM29QM12DH60PBT MBM2 |
128M (8M X 16) BIT
|
Fujitsu Microelectronics
|
